@inproceedings{f2903baf91474c81a32e9a1482b4c146,
title = "The optimization of thermal flow field in a large-size MOCVD reactor",
abstract = "In this paper, the effects of operating conditions in a large-size, vertical and close-spaced reactor for metalorganic chemical vapor deposition are investigated and described by simulation and analysis. The parameters are involved such as space between gas inlet and susceptor (11-20 mm), reactor wall temperature (50- 200°C), gas inlet temperature (50-200°C),and chamber pressure (100-760 torr). These listed parameters show that an optimization ideal stagnation flow can be achieved in a large-size close-spaced reactor.",
author = "Hu, {Chih Kai} and Li, {Tomi T.} and Lin, {Yi Jiun}",
year = "2013",
doi = "10.1149/05201.1021ecst",
language = "???core.languages.en_GB???",
isbn = "9781607683810",
series = "ECS Transactions",
number = "1",
pages = "1021--1026",
booktitle = "China Semiconductor Technology International Conference 2013, CSTIC 2013",
edition = "1",
note = "China Semiconductor Technology International Conference 2013, CSTIC 2013 ; Conference date: 19-03-2013 Through 21-03-2013",
}