@inproceedings{2b04e76b40ae40c4bfce394fca188576,
title = "The optimization of the high-temperature heat source for a MOCVD vacuum reactor",
abstract = "Semiconductor equipment usually can be divided into five sub-system modules, (a) heating system, (b) exhausting system, (c) injecting system, (d) power control and (e) vacuum chamber. Metal organic chemical vapor deposition (MOCVD) process is the key process to deposit epitaxy thin film, and the uniformity is determined by the distribution of susceptor temperature. This research focuses on the development of high temperature heat source. The finite element software helps to develop the best results about the optimized geometry of the heater, the thickness of the susceptor, and the distance between the heater and susceptor. Furthermore, the optimum geometry of heater is received by numerical analysis combined with power controller. Compare with the experiment, the confidence level of software is 92%.",
author = "Chiu, {Hsien Chih} and Hu, {Chih Kai} and Chien, {Hung I.} and Li, {Tomi T.} and Tung, {Pi Chen}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 China Semiconductor Technology International Conference, CSTIC 2015 ; Conference date: 15-03-2015 Through 16-03-2015",
year = "2015",
month = jul,
day = "8",
doi = "10.1109/CSTIC.2015.7153475",
language = "???core.languages.en_GB???",
series = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Cor Claeys and Qinghuang Lin and David Huang and Hanming Wu and Ru Huang and Kafei Lai and Ying Zhang and Beichao Zhang and Kuochun Wu and Larry Chen and Steve Liang and Peilin Song and Hsiang-Lan Lung and Dong Chen and Qi Wang",
booktitle = "China Semiconductor Technology International Conference 2015, CSTIC 2015",
}