@inproceedings{052f07c2e741440cb3f3b9f4b650203e,
title = "The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices",
abstract = "A comprehensive analysis on the BTI induced RTN traps in high-k(HK) CMOS devices have been investigated in inversion (inv.) and accumulation (acc.) modes. The combination of two modes for RTN measurement provides a wide range of energy window in high-k gate dielectric, in which a simple extraction method of RTN analysis has been adopted to analyze the gate dielectric dual-layer of advanced HK devices. The results show that inversion mode measurement can only identify the RTN traps in the channel region, which is related to the V th degradation. While, accumulation mode may detect the traps inside the gate-drain overlap region which provides better understanding of GIDL current. This basic understanding is of critical important to the quality development of HK gate dielectrics in advanced CMOS technologies.",
author = "Wu, {P. C.} and Hsieh, {E. R.} and Lu, {P. Y.} and Chung, {Steve S.} and Chang, {K. Y.} and Liu, {C. H.} and Ke, {J. C.} and Yang, {C. W.} and Tsai, {C. T.}",
year = "2014",
doi = "10.1109/VLSI-TSA.2014.6839679",
language = "???core.languages.en_GB???",
isbn = "9781479922178",
series = "Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014",
publisher = "IEEE Computer Society",
booktitle = "Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014",
note = "2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 ; Conference date: 28-04-2014 Through 30-04-2014",
}