The new double sided silicon microvertex detector for the L3 experiment

O. Adriani; J. Alcaraz; S. Ahlen; G. Ambrosi; A. Basçhirotto; R. Battiston; A. Bay; G. Bencze; B. Bertucci; M. Biasini; G. M. Bilei; G. J. Bobbink; M. Bosetti; M. L. Brooks; J. Busenitz; W. J. Burger; C. Camps; M. Caria; G. Castellini; A. Chen; T. E. Coan; V. Commichau; D. DiBitonto; P. Duinker; S. Easo; P. Extermann; E. Fiandrini; A. Gougas; K. Hangarter; C. Hauviller; A. Herve; S. Hou; I. Josa; J. S. Kapustinski; D. Kim; W. W. Kinnison; J. Kornis; V. R. Krastev; G. Landi; M. Lebeau; P. Lecomte; D. M. Lee; R. Leiste; W. T. Lin; W. Lohmann; R. Massetti; G. B. Mills; H. Nowak; G. Passaleva; T. Paul; M. Pauluzzi; S. Pensotti; P. G. Rancoita; M. Rattaggi; A. Rosch; A. Santocchia; M. Sachwitz; P. Schmitz; B. Schöneich; L. Servoli; G. Susinno; G. Terzi; J. Toth; G. M. Viertel; H. Vogt; S. Waldmeier; J. Wegmann; R. Weill; J. Xu; S. C. Yeh; B. Zhou

doi:10.1016/0168-9002(94)90774-9

The new double sided silicon microvertex detector for the L3 experiment

O. Adriani, J. Alcaraz, S. Ahlen, G. Ambrosi, A. Basçhirotto, R. Battiston, A. Bay, G. Bencze, B. Bertucci, M. Biasini, G. M. Bilei, G. J. Bobbink, M. Bosetti, M. L. Brooks, J. Busenitz, W. J. Burger, C. Camps, M. Caria, G. Castellini, A. ChenT. E. Coan, V. Commichau, D. DiBitonto, P. Duinker, S. Easo, P. Extermann, E. Fiandrini, A. Gougas, K. Hangarter, C. Hauviller, A. Herve, S. Hou, I. Josa, J. S. Kapustinski, D. Kim, W. W. Kinnison, J. Kornis, V. R. Krastev, G. Landi, M. Lebeau, P. Lecomte, D. M. Lee, R. Leiste, W. T. Lin, W. Lohmann, R. Massetti, G. B. Mills, H. Nowak, G. Passaleva, T. Paul, M. Pauluzzi, S. Pensotti, P. G. Rancoita, M. Rattaggi, A. Rosch, A. Santocchia, M. Sachwitz, P. Schmitz, B. Schöneich, L. Servoli, G. Susinno, G. Terzi, J. Toth, G. M. Viertel, H. Vogt, S. Waldmeier, J. Wegmann, R. Weill, J. Xu, S. C. Yeh, B. Zhou

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both rφ and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.

原文	???core.languages.en_GB???
頁（從 - 到）	431-435
頁數	5
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	348
發行號	2-3
DOIs	https://doi.org/10.1016/0168-9002(94)90774-9
出版狀態	已出版 - 1 9月 1994

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10.1016/0168-9002(94)90774-9

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Adriani, O., Alcaraz, J., Ahlen, S., Ambrosi, G., Basçhirotto, A., Battiston, R., Bay, A., Bencze, G., Bertucci, B., Biasini, M., Bilei, G. M., Bobbink, G. J., Bosetti, M., Brooks, M. L., Busenitz, J., Burger, W. J., Camps, C., Caria, M., Castellini, G., ... Zhou, B. (1994). The new double sided silicon microvertex detector for the L3 experiment. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 348(2-3), 431-435. https://doi.org/10.1016/0168-9002(94)90774-9

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title = "The new double sided silicon microvertex detector for the L3 experiment",

abstract = "The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both rφ and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.",

author = "O. Adriani and J. Alcaraz and S. Ahlen and G. Ambrosi and A. Bas{\c c}hirotto and R. Battiston and A. Bay and G. Bencze and B. Bertucci and M. Biasini and Bilei, {G. M.} and Bobbink, {G. J.} and M. Bosetti and Brooks, {M. L.} and J. Busenitz and Burger, {W. J.} and C. Camps and M. Caria and G. Castellini and A. Chen and Coan, {T. E.} and V. Commichau and D. DiBitonto and P. Duinker and S. Easo and P. Extermann and E. Fiandrini and A. Gougas and K. Hangarter and C. Hauviller and A. Herve and S. Hou and I. Josa and Kapustinski, {J. S.} and D. Kim and Kinnison, {W. W.} and J. Kornis and Krastev, {V. R.} and G. Landi and M. Lebeau and P. Lecomte and Lee, {D. M.} and R. Leiste and Lin, {W. T.} and W. Lohmann and R. Massetti and Mills, {G. B.} and H. Nowak and G. Passaleva and T. Paul and M. Pauluzzi and S. Pensotti and Rancoita, {P. G.} and M. Rattaggi and A. Rosch and A. Santocchia and M. Sachwitz and P. Schmitz and B. Sch{\"o}neich and L. Servoli and G. Susinno and G. Terzi and J. Toth and Viertel, {G. M.} and H. Vogt and S. Waldmeier and J. Wegmann and R. Weill and J. Xu and Yeh, {S. C.} and B. Zhou",

year = "1994",

month = sep,

day = "1",

doi = "10.1016/0168-9002(94)90774-9",

language = "???core.languages.en_GB???",

volume = "348",

pages = "431--435",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

number = "2-3",

}

Adriani, O, Alcaraz, J, Ahlen, S, Ambrosi, G, Basçhirotto, A, Battiston, R, Bay, A, Bencze, G, Bertucci, B, Biasini, M, Bilei, GM, Bobbink, GJ, Bosetti, M, Brooks, ML, Busenitz, J, Burger, WJ, Camps, C, Caria, M, Castellini, G, Chen, A, Coan, TE, Commichau, V, DiBitonto, D, Duinker, P, Easo, S, Extermann, P, Fiandrini, E, Gougas, A, Hangarter, K, Hauviller, C, Herve, A, Hou, S, Josa, I, Kapustinski, JS, Kim, D, Kinnison, WW, Kornis, J, Krastev, VR, Landi, G, Lebeau, M, Lecomte, P, Lee, DM, Leiste, R, Lin, WT, Lohmann, W, Massetti, R, Mills, GB, Nowak, H, Passaleva, G, Paul, T, Pauluzzi, M, Pensotti, S, Rancoita, PG, Rattaggi, M, Rosch, A, Santocchia, A, Sachwitz, M, Schmitz, P, Schöneich, B, Servoli, L, Susinno, G, Terzi, G, Toth, J, Viertel, GM, Vogt, H, Waldmeier, S, Wegmann, J, Weill, R, Xu, J, Yeh, SC & Zhou, B 1994, 'The new double sided silicon microvertex detector for the L3 experiment', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 卷 348, 編號 2-3, 頁 431-435. https://doi.org/10.1016/0168-9002(94)90774-9

TY - JOUR

T1 - The new double sided silicon microvertex detector for the L3 experiment

AU - Adriani, O.

AU - Alcaraz, J.

AU - Ahlen, S.

AU - Ambrosi, G.

AU - Basçhirotto, A.

AU - Battiston, R.

AU - Bay, A.

AU - Bencze, G.

AU - Bertucci, B.

AU - Biasini, M.

AU - Bilei, G. M.

AU - Bobbink, G. J.

AU - Bosetti, M.

AU - Brooks, M. L.

AU - Busenitz, J.

AU - Burger, W. J.

AU - Camps, C.

AU - Caria, M.

AU - Castellini, G.

AU - Chen, A.

AU - Coan, T. E.

AU - Commichau, V.

AU - DiBitonto, D.

AU - Duinker, P.

AU - Easo, S.

AU - Extermann, P.

AU - Fiandrini, E.

AU - Gougas, A.

AU - Hangarter, K.

AU - Hauviller, C.

AU - Herve, A.

AU - Hou, S.

AU - Josa, I.

AU - Kapustinski, J. S.

AU - Kim, D.

AU - Kinnison, W. W.

AU - Kornis, J.

AU - Krastev, V. R.

AU - Landi, G.

AU - Lebeau, M.

AU - Lecomte, P.

AU - Lee, D. M.

AU - Leiste, R.

AU - Lin, W. T.

AU - Lohmann, W.

AU - Massetti, R.

AU - Mills, G. B.

AU - Nowak, H.

AU - Passaleva, G.

AU - Paul, T.

AU - Pauluzzi, M.

AU - Pensotti, S.

AU - Rancoita, P. G.

AU - Rattaggi, M.

AU - Rosch, A.

AU - Santocchia, A.

AU - Sachwitz, M.

AU - Schmitz, P.

AU - Schöneich, B.

AU - Servoli, L.

AU - Susinno, G.

AU - Terzi, G.

AU - Toth, J.

AU - Viertel, G. M.

AU - Vogt, H.

AU - Waldmeier, S.

AU - Wegmann, J.

AU - Weill, R.

AU - Xu, J.

AU - Yeh, S. C.

AU - Zhou, B.

PY - 1994/9/1

Y1 - 1994/9/1

N2 - The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both rφ and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.

AB - The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both rφ and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.

UR - http://www.scopus.com/inward/record.url?scp=0028497135&partnerID=8YFLogxK

U2 - 10.1016/0168-9002(94)90774-9

DO - 10.1016/0168-9002(94)90774-9

M3 - 期刊論文

AN - SCOPUS:0028497135

SN - 0168-9002

VL - 348

SP - 431

EP - 435

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2-3

ER -

The new double sided silicon microvertex detector for the L3 experiment

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