The monolithic integration of GaAs-AlGaAs-based unitraveling-carrier photodiodes with Zn-diffusion vertical-cavity surface-emitting lasers with extremely high data rate/power consumption ratios

Jin Wei Shi, F. M. Kuo, T. C. Hsu, Ying Jay Yang, Andrew Joel, Mark Mattingley, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this letter, we demonstrate the monolithic integration of high-speed GaAs-AlGaAs-based unitraveling-carrier photodiode (UTC-PD) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs), both with very high data rate/power consumption ratios for the application to bidirectional optical interconnect. Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (48%), wide 3-dB bandwidth (13 GHz), and 10-Gb/s eye-opening from low to high output photocurrents (0.1-0.4 mA) without integrating with any active ICs. Regarding the integrated Zn-diffusion VCSEL, it can achieve 10-Gb/s eye-opening under a prebias current as small as 3 mA and a very small RF driving voltage (0.25Vp-p driving voltage). The data rate/ power consumption ratio of the VCSEL is extremely high, as much as 2.4 Gb/s·mW-1.

原文???core.languages.en_GB???
頁(從 - 到)1444-1446
頁數3
期刊IEEE Photonics Technology Letters
21
發行號19
DOIs
出版狀態已出版 - 2009

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