The issues on the power consumption of Trigate FinFET: The design and manufacturing guidelines

Keyphrases

• Power Consumption 100%
• Current Variation 100%
• Oxide Thickness Variation 100%
• Line Variation 100%
• Trigate FinFET 100%
• Geometric Variation 100%
• Ion Current 50%
• Downscaling 50%
• Aspect Ratio 50%
• Fin Field-effect Transistor (FinFET) 50%
• Induced Variation 50%
• Tri-gate 50%
• Static Power 50%
• Off-state Leakage Current 50%
• Gate Capacitance 50%
• Fin Width 50%
• Height Scale 50%
• Line Roughness 50%
• Gate Oxide 50%
• Active Power Consumption 50%
• Fin Height 50%

Engineering

• Electric Power Utilization 100%
• Oxide Thickness 100%
• Experimental Result 50%
• Active Power 50%
• Fin Width 50%
• Gate Capacitance 50%
• Fin Height 50%
• Induced Roughness 50%
• Gate Oxide 50%
• Aspect Ratio 50%