The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

J. W. Shi; H. Y. Huang; J. K. Sheu; C. H. Chen; Y. S. Wu; W. C. Lai

doi:10.1109/LPT.2006.879526

The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

J. W. Shi, H. Y. Huang, J. K. Sheu, C. H. Chen, Y. S. Wu, W. C. Lai

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

39 引文斯高帕斯（Scopus）

摘要

We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the In_x Ga _1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

原文	???core.languages.en_GB???
頁（從 - 到）	1636-1638
頁數	3
期刊	IEEE Photonics Technology Letters
卷	18
發行號	15
DOIs	https://doi.org/10.1109/LPT.2006.879526
出版狀態	已出版 - 1 8月 2006

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10.1109/LPT.2006.879526

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title = "The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication",

abstract = "We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.",

keywords = "Light-emitting diode (LED), Optical fiber",

author = "Shi, {J. W.} and Huang, {H. Y.} and Sheu, {J. K.} and Chen, {C. H.} and Wu, {Y. S.} and Lai, {W. C.}",

note = "Funding Information: Manuscript received January 20, 2006; revised May 9, 2006. This work was sponsored by the National Science Council of Taiwan under Grant NSC-94-2215-E-008-008-.",

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AU - Shi, J. W.

AU - Huang, H. Y.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Wu, Y. S.

AU - Lai, W. C.

N1 - Funding Information: Manuscript received January 20, 2006; revised May 9, 2006. This work was sponsored by the National Science Council of Taiwan under Grant NSC-94-2215-E-008-008-.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

AB - We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the Inx Ga 1-xN-GaN-based multiple-quantum- well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW.

KW - Light-emitting diode (LED)

KW - Optical fiber

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

The improvement in modulation speed of GaN-based green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

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