The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon

J. H. He; Y. L. Chueh; W. W. Wu; S. W. Lee; L. J. Chen; L. J. Chou

doi:10.1016/j.tsf.2004.06.179

The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon

J. H. He, Y. L. Chueh, W. W. Wu, S. W. Lee, L. J. Chen, L. J. Chou

材料科學與工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Self-assembled SiGe quantum rings (QRs) on Si_0.8Ge_0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100°C in N₂ ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 run, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.

原文	???core.languages.en_GB???
頁（從 - 到）	478-482
頁數	5
期刊	Thin Solid Films
卷	469-470
發行號	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.06.179
出版狀態	已出版 - 22 12月 2004

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10.1016/j.tsf.2004.06.179

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title = "The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon",

abstract = "Self-assembled SiGe quantum rings (QRs) on Si0.8Ge0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100°C in N2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 run, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.",

keywords = "Nanorings, Quantum rings, Self-assembly, SiGe",

author = "He, {J. H.} and Chueh, {Y. L.} and Wu, {W. W.} and Lee, {S. W.} and Chen, {L. J.} and Chou, {L. J.}",

note = "Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 92-2215-E-007-003 and Ministry of Education Grant No. 91-E-FA04-1-4.",

year = "2004",

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doi = "10.1016/j.tsf.2004.06.179",

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TY - JOUR

T1 - The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon

AU - He, J. H.

AU - Chueh, Y. L.

AU - Wu, W. W.

AU - Lee, S. W.

AU - Chen, L. J.

AU - Chou, L. J.

N1 - Funding Information: The research is supported by the Republic of China National Science Council Grant No. NSC 92-2215-E-007-003 and Ministry of Education Grant No. 91-E-FA04-1-4.

PY - 2004/12/22

Y1 - 2004/12/22

N2 - Self-assembled SiGe quantum rings (QRs) on Si0.8Ge0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100°C in N2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 run, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.

AB - Self-assembled SiGe quantum rings (QRs) on Si0.8Ge0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100°C in N2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 run, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings.

KW - Nanorings

KW - Quantum rings

KW - Self-assembly

KW - SiGe

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U2 - 10.1016/j.tsf.2004.06.179

DO - 10.1016/j.tsf.2004.06.179

M3 - 期刊論文

AN - SCOPUS:10044223282

SN - 0040-6090

VL - 469-470

SP - 478

EP - 482

JO - Thin Solid Films

JF - Thin Solid Films

IS - SPEC. ISS.

ER -

The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon

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