The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

E. R. Hsieh, W. L. Tsai, Y. L. Lin, C. H. Liu, S. S. Chung, Y. T. Tang, J. R. Su, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We present the 1st embedded 14nm FeFinFET NVMs, 2T1CFE. Compared to 1T1CFE array, 2T1CFE one shows 25x↑of the SN ratio, 104x↓of the PGM power, and 103x↓of READ power. The gradual tuning of conductance for 2T1CFE has been tuned linearly and symmetrically with 3x104x of the window, where 8 separated conductance states can be stored with crystal gaps in between. Continual endurance cycles for 8 states are >107 times. The retention of 8 states has been baked in 85°C for >1 month. The 8 states have also passed the PGM disturbance test. Finally, this 2T1CFE array is as electrical synapses in a very deep neural network (DNN) with 23.8 million parameters for practice, and most importantly, the 2T1CFE is also as an activation, Rectified Linear Unit (ReLU), for the first time. Compared to the 5T-CMOS ReLU, the 2T1CFE ReLU shows 70%↑of inference accuracy. Overall, 2T1CFE shows strong potential as key components in high-performance low-power inference-accelerators.

原文???core.languages.en_GB???
主出版物標題2021 Symposium on VLSI Technology, VLSI Technology 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863487802
出版狀態已出版 - 2021
事件41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan
持續時間: 13 6月 202119 6月 2021

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2021-June
ISSN(列印)0743-1562

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???41st Symposium on VLSI Technology, VLSI Technology 2021
國家/地區Japan
城市Virtual, Online
期間13/06/2119/06/21

指紋

深入研究「The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators」主題。共同形成了獨特的指紋。

引用此