The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress

H. H. Lin, S. L. Cheng, L. J. Chen

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Ultrafast diffusion of Ni and Cu atoms in p+-Si channel was observed. Contact failed at negative contact first, possibly by electron-hole recombination at the negative electrode. Ti diffusion assisted by Cu under high current density was observed in the Cu and Ti multilayered samples. Ti atoms at Ti contact cannot migrate into the diffusion channel but can be carried by Cu atoms. In addition, Cu and Ti easily interdiffused under high current density.

原文???core.languages.en_GB???
頁(從 - 到)161-165
頁數5
期刊Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
169
發行號1-4
DOIs
出版狀態已出版 - 2000

指紋

深入研究「The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted (0 0 1)Si under high current stress」主題。共同形成了獨特的指紋。

引用此