@inproceedings{cdb5765875784ba68a62991fc16aa94a,
title = "The Extension of the FinFET Generation Towards Sub-3nm: The Strategy and Guidelines",
abstract = "Further improvement of FinFET has been demonstrated in the extension of the Moore's Law toward N3 technology and beyond. In the width direction, the approach is to use air-trench-isolation (ATI) between fins such that inter-fin spaces with air-gap in the active region become scalable. Along the channel direction, air-spacer between gate and S/D was adopted to reduce the parasitic capacitance. The scalable ATI FinFET exhibits better DC and RF performance as a result of huge increase of Ion and the reduction of Cgd. As a benchmark, in comparison to the conventional FinFET, we provide a guideline on designing much better improvement of the FinFET towards N3 technology node.",
author = "Chung, {Steve S.} and Chiang, {C. K.} and H. Pai and Hsieh, {E. R.} and Guo, {J. C.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",
year = "2022",
doi = "10.1109/EDTM53872.2022.9798277",
language = "???core.languages.en_GB???",
series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15--17",
booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",
}