The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

研究成果: 書貢獻/報告類型會議論文篇章同行評審

20 引文 斯高帕斯(Scopus)

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Engineering & Materials Science