The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices
E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai
研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審
20
引文
斯高帕斯(Scopus)