The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh; P. Y. Lu; Steve S. Chung; K. Y. Chang; C. H. Liu; J. C. Ke; C. W. Yang; C. T. Tsai

doi:10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh
, P. Y. Lu
, Steve S. Chung
, K. Y. Chang
, C. H. Liu
, J. C. Ke
, C. W. Yang
, C. T. Tsai

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

20 引文斯高帕斯（Scopus）

摘要

For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

原文	???core.languages.en_GB???
主出版物標題	Digest of Technical Papers - Symposium on VLSI Technology
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894389
出版狀態	已出版 - 8 9月 2014
事件	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States 持續時間: 9 6月 2014 → 12 6月 2014

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
ISSN（列印）	0743-1562

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	34th Symposium on VLSI Technology, VLSIT 2014
國家/地區	United States
城市	Honolulu
期間	9/06/14 → 12/06/14

存取文件

10.1109/VLSIT.2014.6894389

引用此

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., & Tsai, C. T. (2014). The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. 於 Digest of Technical Papers - Symposium on VLSI Technology 文章 6894389 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894389

@inproceedings{220ece900e234864816f67c6a36a2018,

title = "The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices",

abstract = "For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.",

author = "Hsieh, \{E. R.\} and Lu, \{P. Y.\} and Chung, \{Steve S.\} and Chang, \{K. Y.\} and Liu, \{C. H.\} and Ke, \{J. C.\} and Yang, \{C. W.\} and Tsai, \{C. T.\}",

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Hsieh, ER, Lu, PY, Chung, SS, Chang, KY, Liu, CH, Ke, JC, Yang, CW & Tsai, CT 2014, The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. 於 Digest of Technical Papers - Symposium on VLSI Technology., 6894389, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 9/06/14. https://doi.org/10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. / Hsieh, E. R.; Lu, P. Y.; Chung, Steve S. 等.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894389 (Digest of Technical Papers - Symposium on VLSI Technology).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

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AU - Hsieh, E. R.

AU - Lu, P. Y.

AU - Chung, Steve S.

AU - Chang, K. Y.

AU - Liu, C. H.

AU - Ke, J. C.

AU - Yang, C. W.

AU - Tsai, C. T.

PY - 2014/9/8

Y1 - 2014/9/8

N2 - For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

AB - For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

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M3 - 會議論文篇章

AN - SCOPUS:84907694338

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - Digest of Technical Papers - Symposium on VLSI Technology

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Hsieh ER, Lu PY, Chung SS, Chang KY, Liu CH, Ke JC 等. The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices. 於 Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894389. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894389

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

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