@inproceedings{220ece900e234864816f67c6a36a2018,
title = "The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices",
abstract = "For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.",
author = "Hsieh, {E. R.} and Lu, {P. Y.} and Chung, {Steve S.} and Chang, {K. Y.} and Liu, {C. H.} and Ke, {J. C.} and Yang, {C. W.} and Tsai, {C. T.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 34th Symposium on VLSI Technology, VLSIT 2014 ; Conference date: 09-06-2014 Through 12-06-2014",
year = "2014",
month = sep,
day = "8",
doi = "10.1109/VLSIT.2014.6894389",
language = "???core.languages.en_GB???",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
}