@inproceedings{476288052dae4510a88b52cd408475c4,
title = "The effects of stress on the formation of titanium silicide",
abstract = "The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi2 formation significantly. On the other hand, tensile stress presented in the silicon substrate was found to promote the formation of TiSi2. In addition, the TiSi2 film thickness was found to decrease and increase with the compressive and tensile stress levels, respectively. The results indicated that compressive stress hinders Si migration through the Ti-Si interface so that the formation of TiSi2 films is retarded. In contrast, tensile stress promotes Si diffusion to facilitate TiSi2 formation.",
author = "Cheng, {S. L.} and H. Huang and Peng, {Y. C.} and Chen, {L. J.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.} and Yu, {K. H.}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 IEEE International Interconnect Technology Conference, IITC 1998 ; Conference date: 01-06-1998 Through 03-06-1998",
year = "1998",
doi = "10.1109/IITC.1998.704788",
language = "???core.languages.en_GB???",
series = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "190--192",
booktitle = "Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998",
}