The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Hsien Chin Chiu; Wen Yu Lin; W. J. Hsueh; Pei Chin Chiu; Yue Ming Hsin; Jen Inn Chyi

doi:10.1016/j.microrel.2015.03.016

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Hsien Chin Chiu, Wen Yu Lin, W. J. Hsueh, Pei Chin Chiu, Yue Ming Hsin, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

原文	???core.languages.en_GB???
頁（從 - 到）	890-893
頁數	4
期刊	Microelectronics Reliability
卷	55
發行號	6
DOIs	https://doi.org/10.1016/j.microrel.2015.03.016
出版狀態	已出版 - 1 5月 2015

存取文件

10.1016/j.microrel.2015.03.016

引用此

@article{82f371194a32403f838fd2cb0cb3f090,

title = "The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors",

abstract = "In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.",

keywords = "AlSb/InAs, Hot carrier stress, Iridium, Reliability",

author = "Chiu, {Hsien Chin} and Lin, {Wen Yu} and Hsueh, {W. J.} and Chiu, {Pei Chin} and Hsin, {Yue Ming} and Chyi, {Jen Inn}",

year = "2015",

month = may,

day = "1",

doi = "10.1016/j.microrel.2015.03.016",

language = "???core.languages.en_GB???",

volume = "55",

pages = "890--893",

journal = "Microelectronics Reliability",

issn = "0026-2714",

number = "6",

}

TY - JOUR

T1 - The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

AU - Chiu, Hsien Chin

AU - Lin, Wen Yu

AU - Hsueh, W. J.

AU - Chiu, Pei Chin

AU - Hsin, Yue Ming

AU - Chyi, Jen Inn

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

AB - In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated.

KW - AlSb/InAs

KW - Hot carrier stress

KW - Iridium

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=84929032191&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.03.016

DO - 10.1016/j.microrel.2015.03.016

M3 - 期刊論文

AN - SCOPUS:84929032191

SN - 0026-2714

VL - 55

SP - 890

EP - 893

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6

ER -

The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

摘要

存取文件

指紋

引用此