@inproceedings{553f8271c061430f85e93f2bd7ca600d,
title = "The demonstration of low-cost and logic process fully-compatible OTP memory on advanced HKMG CMOS with a newly found dielectric fuse breakdown",
abstract = "For the first time, the dielectric fuse breakdown has been observed in HKMG and poly-Si CMOS devices. It was found that, different from the conventional anti-fuse dielectric breakdown, such as the hard and soft breakdowns, this new fuse-breakdown behavior exhibits a typical property of an open gate and can be operated in much lower programming current (< 50μA), fast speed (∼20μsec), and excellent data retention, in comparison to the other fuse mechanisms. Based on this new mechanism, we have designed a smallest memory cell array which can be easily integrated into state-of-the-art advanced CMOS technology to realize highly reliable, secure, and dense OTP functionality with very low cost to meet the requirements of memory applications in the IoT era.",
author = "Hsieh, {E. R.} and Huang, {Z. H.} and Chung, {Steve S.} and Ke, {J. C.} and Yang, {C. W.} and Tsai, {C. T.} and Yew, {T. R.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",
year = "2015",
month = feb,
day = "16",
doi = "10.1109/IEDM.2015.7409619",
language = "???core.languages.en_GB???",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3.4.1--3.4.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
}