The demonstration of low-cost and logic process fully-compatible OTP memory on advanced HKMG CMOS with a newly found dielectric fuse breakdown

E. R. Hsieh, Z. H. Huang, Steve S. Chung, J. C. Ke, C. W. Yang, C. T. Tsai, T. R. Yew

研究成果: 書貢獻/報告類型會議論文篇章同行評審

4 引文 斯高帕斯(Scopus)

摘要

For the first time, the dielectric fuse breakdown has been observed in HKMG and poly-Si CMOS devices. It was found that, different from the conventional anti-fuse dielectric breakdown, such as the hard and soft breakdowns, this new fuse-breakdown behavior exhibits a typical property of an open gate and can be operated in much lower programming current (< 50μA), fast speed (∼20μsec), and excellent data retention, in comparison to the other fuse mechanisms. Based on this new mechanism, we have designed a smallest memory cell array which can be easily integrated into state-of-the-art advanced CMOS technology to realize highly reliable, secure, and dense OTP functionality with very low cost to meet the requirements of memory applications in the IoT era.

原文???core.languages.en_GB???
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3.4.1-3.4.4
ISBN(電子)9781467398930
DOIs
出版狀態已出版 - 16 2月 2015
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
持續時間: 7 12月 20159 12月 2015

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

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???event.eventtypes.event.conference???61st IEEE International Electron Devices Meeting, IEDM 2015
國家/地區United States
城市Washington
期間7/12/159/12/15

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