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The characterization of InAlN/AlN/GaN HEMTs using silicon-on-insulator (SOI) substrate technology
Hsien Chin Chiu
, Li Yi Peng
, Hou Yu Wang
, Hsiang Chun Wang
, Hsuan Ling Kao
, G. Y. Lee
,
Jen Inn Chyi
電機工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
4
引文 斯高帕斯(Scopus)
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深入研究「The characterization of InAlN/AlN/GaN HEMTs using silicon-on-insulator (SOI) substrate technology」主題。共同形成了獨特的指紋。
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Keyphrases
GaN HEMT
100%
Silicon-on-insulator
100%
Insulator Substrate
100%
Substrate Technology
100%
InAlN
100%
High Electron Mobility Transistor
50%
P-type
25%
Raman Spectroscopy
12%
Power Performance
12%
Metal-organic Chemical Vapor Deposition (MOCVD)
12%
Silica
12%
Wafer
12%
Spectroscopic Measurement
12%
X-ray Diffraction Measurement
12%
Microwave Energy
12%
Heterogeneous Integration
12%
Low-frequency Noise
12%
Epitaxy
12%
Signal Loss
12%
Hot Carrier Stress
12%
High-resistivity Silicon (HR-Si)
12%
Low Leakage Current
12%
Silicon-on-insulator Wafer
12%
Flat Surface
12%
Low Frequency Noise Measurements
12%
Noise Characteristics
12%
Off-state Breakdown Voltage
12%
Heterointerface
12%
Material Science
Silicon
100%
Aluminum Nitride
100%
Transistor
55%
Electron Mobility
55%
Raman Spectroscopy
11%
X-Ray Diffraction
11%
Epitaxy
11%
Diffraction Measurement
11%
Metal-Organic Chemical Vapor Deposition
11%
Electrical Resistivity
11%
Hot Carrier
11%
Surface (Surface Science)
11%
Engineering
Silicon on Insulator
100%
Frequency Noise
22%
Ray Diffraction
11%
Metal Organic Chemical Vapor Deposition
11%
Si Substrate
11%
Breakdown Voltage
11%
Microwave Frequency
11%
Silicon Dioxide
11%
Flat Surface
11%