The characteristics of EPI-SI thin film in electron cyclotron resonance plasma examined by an integrated plasma diagnostic sub-system

S. K. Jou, L. C. Hu, C. R. Yang, Y. W. Lin, C. J. Wang, T. C. Wei, C. C. Lee, J. Y. Chang, I. C. Chen, Tomi T. Li

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with respect to hydrogen dilution ratio of H2/SiH4 was also discussed. Three growth mechanisms were proposed to explain the effect on the crystallization of epi-si thin films based on adding hydrogen atoms to help the crystallization.

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主出版物標題China Semiconductor Technology International Conference 2016, CSTIC 2016
編輯Hanming Wu, Hsiang-Lan Lung, Ying Shi, Dong Chen, David Huang, Qi Wang, Kuochun Wu, Ying Zhang, Cor Claeys, Steve Liang, Ru Huang, Beichao Zhang, Peilin Song, Jiang Yan, Qinghuang Lin, Kafai Lai
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781467388047
DOIs
出版狀態已出版 - 2 5月 2016
事件China Semiconductor Technology International Conference, CSTIC 2016 - Shanghai, China
持續時間: 13 3月 201614 3月 2016

出版系列

名字China Semiconductor Technology International Conference 2016, CSTIC 2016

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???event.eventtypes.event.conference???China Semiconductor Technology International Conference, CSTIC 2016
國家/地區China
城市Shanghai
期間13/03/1614/03/16

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