The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin
研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
17
引文
斯高帕斯(Scopus)