The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

W. C. Liao, Y. L. Chen, C. H. Chen, J. I. Chyi, Y. M. Hsin

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

摘要

A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (VDS) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high VDS off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (EC - 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.

原文???core.languages.en_GB???
文章編號033503
期刊Applied Physics Letters
104
發行號3
DOIs
出版狀態已出版 - 20 1月 2014

指紋

深入研究「The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors」主題。共同形成了獨特的指紋。

引用此