The application of a heating baffle in a high temperature vacuum reactor

Kuei Fang Chen, Jun Ching Chiu, Chih Kai Hu, Tomi T. Li, Pi Chen Tung

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

The temperature uniformity of thin film process is an important issue for susceptor in high temperature vacuum system. When the temperature of process is extremely high the uniformity is not only difficult to control, but also hard to maintain. In order to raise the temperature utilization at high temperature which is higher than 1300°C, the heating baffle is introduced for this purpose. As the result, the thermal radiation is economized about 1% in the chamber which contains six pieces of two-inch wafers. On the other hand, the heating baffle also improves the temperature uniformity of the wafer area on susceptor. The results show the temperature difference decreases to 6°C after using the heating baffle, and it shows that an optimum temperature uniformity can be achieved in a self-assembly reactor.

原文???core.languages.en_GB???
主出版物標題China Semiconductor Technology International Conference 2017, CSTIC 2017
編輯Steve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509066940
DOIs
出版狀態已出版 - 4 5月 2017
事件2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
持續時間: 12 3月 201713 3月 2017

出版系列

名字China Semiconductor Technology International Conference 2017, CSTIC 2017

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???event.eventtypes.event.conference???2017 China Semiconductor Technology International Conference, CSTIC 2017
國家/地區China
城市Shanghai
期間12/03/1713/03/17

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