The analysis of power and linearity characteristics of SiGe HBTs at low temperatures

Meng Wei Hsieh; Yue Ming Hsin; Kung Hao Liang; Yi Jen Chan; Denny Tang; Chwan Ying Lee

doi:10.1109/MWSYM.2006.249857

The analysis of power and linearity characteristics of SiGe HBTs at low temperatures

Meng Wei Hsieh, Yue Ming Hsin, Kung Hao Liang, Yi Jen Chan, Denny Tang, Chwan Ying Lee

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC π/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures.

原文	???core.languages.en_GB???
文章編號	4015365
頁（從 - 到）	2047-2050
頁數	4
期刊	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249857
出版狀態	已出版 - 2006
事件	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States 持續時間: 11 6月 2006 → 16 6月 2006

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10.1109/MWSYM.2006.249857

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abstract = "This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC π/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures.",

keywords = "Cryogenic temperatures, Heterojunction barrier effect, Linearity, Power, SIC",

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T1 - The analysis of power and linearity characteristics of SiGe HBTs at low temperatures

AU - Hsieh, Meng Wei

AU - Hsin, Yue Ming

AU - Liang, Kung Hao

AU - Chan, Yi Jen

AU - Tang, Denny

AU - Lee, Chwan Ying

PY - 2006

Y1 - 2006

N2 - This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC π/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures.

AB - This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC π/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures.

KW - Cryogenic temperatures

KW - Heterojunction barrier effect

KW - Linearity

KW - Power

KW - SIC

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DO - 10.1109/MWSYM.2006.249857

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The analysis of power and linearity characteristics of SiGe HBTs at low temperatures

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