Testing Disturbance Faults in Various NAND Flash Memories

Chih Sheng Hou, Jin Fu Li

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)


NAND flash memory is one popular non-volatile memory. Flash memory is prone to disturbance faults due to its specific mechanism of functional operations. Furthermore, different NAND flash memories might be different on the array organizations and the supported functional operations. For example, some NAND flash memories can support the random program operation, but some cannot; some NAND flash memories with single-page wordlines and some with multiple-page wordlines. The differences on the array organizations and the functional operations result in the heavy influence on the testing of disturbance faults. In this paper, therefore, we analyze the disturbance faults for NAND flash memories with different array organizations and functional operations. Also, test algorithms for covering the disturbance faults in various types of NAND flash memories are proposed.

頁(從 - 到)643-652
期刊Journal of Electronic Testing: Theory and Applications (JETTA)
出版狀態已出版 - 3 12月 2014


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