Testing disturbance faults in various NAND flash memories

Chih Sheng Hou, Jin Fu Li

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

NAND flash memory is the most popular nonvolatile memory. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. For example, some NAND flash memories can support the random program operation, but some cannot; some NAND flash memories with single-page wordlines and some with multiple-page wordlines. The differences on the array organizations and the functional operations result in the heavy influence on the testing of disturbance faults. In this paper, therefore, we analyze the disturbance faults for NAND flash memories with different array organizations and functional operations. Also, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.

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文章編號6690645
頁(從 - 到)221-226
頁數6
期刊Proceedings of the Asian Test Symposium
DOIs
出版狀態已出版 - 2013
事件2013 22nd Asian Test Symposium, ATS 2013 - Yilan, Taiwan
持續時間: 18 11月 201321 11月 2013

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