Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

Che Ming Wang, Yue Ming Hsin, Haijun Zhu, J. M. Kuo, Y. C. Kao

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.

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文章編號232102
期刊Applied Physics Letters
90
發行號23
DOIs
出版狀態已出版 - 2007

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