Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

Che Ming Wang; Yue Ming Hsin; Haijun Zhu; J. M. Kuo; Y. C. Kao

doi:10.1063/1.2746073

Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

Che Ming Wang, Yue Ming Hsin, Haijun Zhu, J. M. Kuo, Y. C. Kao

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.

原文	???core.languages.en_GB???
文章編號	232102
期刊	Applied Physics Letters
卷	90
發行號	23
DOIs	https://doi.org/10.1063/1.2746073
出版狀態	已出版 - 2007

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10.1063/1.2746073

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title = "Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors",

abstract = "InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.",

author = "Wang, {Che Ming} and Hsin, {Yue Ming} and Haijun Zhu and Kuo, {J. M.} and Kao, {Y. C.}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research under Contract No. NSC 95-2221-E-008-162.",

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T1 - Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

AU - Wang, Che Ming

AU - Hsin, Yue Ming

AU - Zhu, Haijun

AU - Kuo, J. M.

AU - Kao, Y. C.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for partially supporting this research under Contract No. NSC 95-2221-E-008-162.

PY - 2007

Y1 - 2007

N2 - InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.

AB - InAlAs-InPGaAsSbInP double heterojunction bipolar transistors (HBTs) with InAlAs-InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs-InP composite emitter structure effectively reduces electron pileup in the InPGaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mVK) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs-InP composite emitter.

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DO - 10.1063/1.2746073

M3 - 期刊論文

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 232102

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Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors

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