GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.
|頁（從 - 到）||II/-|
|期刊||Materials Science Forum|
|出版狀態||已出版 - 2000|
|事件||ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA|
持續時間: 10 10月 1999 → 15 10月 1999