Temperature dependent performance of GaN Schottky diode rectifiers

X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, C. M. Lee, C. C. Chuo, J. I. Chyi, G. C. Chi, J. Han, S. N.G. Chu, R. G. Wilson

研究成果: 雜誌貢獻會議論文同行評審


GaN Schottky diode rectifiers with reverse breakdown (VRB)>2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of VRB and forward turn-on voltage (VF) were measured. The VRB values display a negative temperature coefficient (-0.92 V·K-1 for 25-50 °C; -0.17 V·K-1 for 50-150 °C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

頁(從 - 到)II/-
期刊Materials Science Forum
出版狀態已出版 - 2000
事件ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
持續時間: 10 10月 199915 10月 1999


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