Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Jen Wei Pan; Ming Hong Chen; Jen Inn Chyi; Tien Tsorng Shih

doi:10.1109/68.730474

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

Jen Wei Pan
, Ming Hong Chen
, Jen Inn Chyi
, Tien Tsorng Shih

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

原文	???core.languages.en_GB???
頁（從 - 到）	1700-1702
頁數	3
期刊	IEEE Photonics Technology Letters
卷	10
發行號	12
DOIs	https://doi.org/10.1109/68.730474
出版狀態	已出版 - 12月 1998

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title = "Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers",

abstract = "Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.",

keywords = "Cavity length, Multiple-quantum well, Semiconductor lasers, Strain compensation",

author = "Pan, \{Jen Wei\} and Chen, \{Ming Hong\} and Chyi, \{Jen Inn\} and Shih, \{Tien Tsorng\}",

note = "Funding Information: Manuscript received June 2, 1998; revised August 10, 1998. This work was supported by the National Science Council of R.O.C. under Contract NSC87-2215-E008-012 and by Chunghwa Telecom Company, Ltd. under Contract TL-86-5106. J.-W. Pan, M.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. T.-T. Shih is with Telecommunication Labs, Chunghwa Telecom Co., Ltd., Yang-Mei 326, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)08769-2.",

year = "1998",

month = dec,

doi = "10.1109/68.730474",

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volume = "10",

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TY - JOUR

T1 - Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

AU - Pan, Jen Wei

AU - Chen, Ming Hong

AU - Chyi, Jen Inn

AU - Shih, Tien Tsorng

N1 - Funding Information: Manuscript received June 2, 1998; revised August 10, 1998. This work was supported by the National Science Council of R.O.C. under Contract NSC87-2215-E008-012 and by Chunghwa Telecom Company, Ltd. under Contract TL-86-5106. J.-W. Pan, M.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. T.-T. Shih is with Telecommunication Labs, Chunghwa Telecom Co., Ltd., Yang-Mei 326, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)08769-2.

PY - 1998/12

Y1 - 1998/12

N2 - Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

AB - Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.

KW - Cavity length

KW - Multiple-quantum well

KW - Semiconductor lasers

KW - Strain compensation

UR - https://www.scopus.com/pages/publications/0032300339

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DO - 10.1109/68.730474

M3 - 期刊論文

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SN - 1041-1135

VL - 10

SP - 1700

EP - 1702

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers

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