@article{aa28fd106d0a421494dac2d2a83f034f,
title = "Temperature-dependent characteristics of 1.3-μm AlGaInAs-InP lasers with multiquantum barriers at the guiding layers",
abstract = "Strain-compensated 1.3-μm AlGaInAs-InP multiquantum-well (MQW) lasers with multiquantum barriers at both the n- and p-type guiding layers are comprehensively studied. The laser exhibits a characteristic temperature as high as 95 K and degradation in slope efficiency as low as -1.06 dB in the temperature range from 25 °C to 75 °C. The characteristic temperature of transparency current density is deduced to be 129 K. It is also found that the internal loss increases slowly with temperature, while the temperature dependence of the internal quantum efficiency dominates the degradation of the external quantum efficiency due to the degradation of the stimulated recombination, and significant increase of electron and hole leakage at high temperature.",
keywords = "Cavity length, Multiple-quantum well, Semiconductor lasers, Strain compensation",
author = "Pan, {Jen Wei} and Chen, {Ming Hong} and Chyi, {Jen Inn} and Shih, {Tien Tsorng}",
note = "Funding Information: Manuscript received June 2, 1998; revised August 10, 1998. This work was supported by the National Science Council of R.O.C. under Contract NSC87-2215-E008-012 and by Chunghwa Telecom Company, Ltd. under Contract TL-86-5106. J.-W. Pan, M.-H. Chen, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Chung-Li 320, Taiwan, R.O.C. T.-T. Shih is with Telecommunication Labs, Chunghwa Telecom Co., Ltd., Yang-Mei 326, Taiwan, R.O.C. Publisher Item Identifier S 1041-1135(98)08769-2.",
year = "1998",
month = dec,
doi = "10.1109/68.730474",
language = "???core.languages.en_GB???",
volume = "10",
pages = "1700--1702",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "12",
}