Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes

Chia Ming Lee, Chang Cheng Chuo, Jing Fu Dai, Xian Fa Zheng, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

46 引文 斯高帕斯(Scopus)

摘要

The temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes is investigated. From the electroluminescence spectra measured at various temperatures, it is found that there are two peaks at about 400 and 460 nm, which can be assigned as Mg-related and quantum well transitions, respectively. The behavior of these two peaks with temperature is modeled by the two rate equation. Based on this model, we deduce the activation energy of Mg in GaN films to be about 126 meV, which is consistent with reported results obtained by other techniques.

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頁(從 - 到)6554-6556
頁數3
期刊Journal of Applied Physics
89
發行號11 I
DOIs
出版狀態已出版 - 6月 2001

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