Temperature dependence of GaN high breakdown voltage diode rectifiers

J. I. Chyi; C. M. Lee; C. C. Chuo; X. A. Cao; G. T. Dang; A. P. Zhang; F. Ren; S. J. Pearton; S. N.G. Chu; R. G. Wilson

doi:10.1016/S0038-1101(99)00183-5

Temperature dependence of GaN high breakdown voltage diode rectifiers

J. I. Chyi, C. M. Lee, C. C. Chuo, X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, S. J. Pearton, S. N.G. Chu, R. G. Wilson

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

35 引文斯高帕斯（Scopus）

摘要

The temperature dependence of reverse breakdown voltage (V_RB) and forward turn-on voltage (V_F) of GaN Schottky diode rectifiers is reported. The V_RB values display a negative temperature coefficient (-0.92 V K^-1 for 25-50°C; -0.17 V K^-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The V_F values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

原文	???core.languages.en_GB???
頁（從 - 到）	613-617
頁數	5
期刊	Solid-State Electronics
卷	44
發行號	4
DOIs	https://doi.org/10.1016/S0038-1101(99)00183-5
出版狀態	已出版 - 1 4月 2000

存取文件

10.1016/S0038-1101(99)00183-5

引用此

@article{260826430f5844c99ebd5c3e303d0359,

title = "Temperature dependence of GaN high breakdown voltage diode rectifiers",

abstract = "The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.",

author = "Chyi, {J. I.} and Lee, {C. M.} and Chuo, {C. C.} and Cao, {X. A.} and Dang, {G. T.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chu, {S. N.G.} and Wilson, {R. G.}",

note = "Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), no. MDA 98-072-1-006, monitored by ONR (J. C. Zolper).",

year = "2000",

month = apr,

day = "1",

doi = "10.1016/S0038-1101(99)00183-5",

language = "???core.languages.en_GB???",

volume = "44",

pages = "613--617",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "4",

}

TY - JOUR

T1 - Temperature dependence of GaN high breakdown voltage diode rectifiers

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Cao, X. A.

AU - Dang, G. T.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chu, S. N.G.

AU - Wilson, R. G.

N1 - Funding Information: The work at UF is partially supported by a DARPA/EPRI grant (D. Radack/J. Melcher), no. MDA 98-072-1-006, monitored by ONR (J. C. Zolper).

PY - 2000/4/1

Y1 - 2000/4/1

N2 - The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

AB - The temperature dependence of reverse breakdown voltage (VRB) and forward turn-on voltage (VF) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50°C; -0.17 V K-1 for 50-150°C), indicative of surface- or defect-assisted breakdown. The VF values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance.

UR - http://www.scopus.com/inward/record.url?scp=0033907597&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(99)00183-5

DO - 10.1016/S0038-1101(99)00183-5

M3 - 期刊論文

AN - SCOPUS:0033907597

SN - 0038-1101

VL - 44

SP - 613

EP - 617

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -

Temperature dependence of GaN high breakdown voltage diode rectifiers

摘要

存取文件

指紋

引用此