A taper line distributed photodetector (TLDP) was proposed. Low temperature grown GaAs based self-align metal-semiconductor-metal traveling wave photodetector structure was adopted as the active photo-absorption region in each taper section for its high speed and high efficiency characteristics. The velocity match between optical wave and microwave in velocity match distributed photodetector (VMPD) was replaced by phase match in each taper section of the structure. High impedance line in first taper section was achieved without radiation loss.
|頁（從 - 到）||382-383|
|期刊||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|出版狀態||已出版 - 2001|
|事件||14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States|
持續時間: 11 11月 2001 → 15 11月 2001