Tailoring of the wave function overlaps and the carrier lifetimes in InAs/GaAs1-xSbx type-II quantum dots

Wei Ting Hsu, Yu An Liao, Shu Kai Lu, Shun Jen Cheng, Pei Chin Chiu, Jen Inn Chyi, Wen Hao Chang

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs 1-xSbx layer. We find that the type-II QD structure can sustain thermal annealing up to 850 °C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs1-xSb x type-II QDs.

原文???core.languages.en_GB???
頁(從 - 到)2524-2528
頁數5
期刊Physica E: Low-Dimensional Systems and Nanostructures
42
發行號10
DOIs
出版狀態已出版 - 9月 2010

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