Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

研究成果: 雜誌貢獻期刊論文同行評審

85 引文 斯高帕斯(Scopus)

摘要

Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001) Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 Vμm and a threshold field of 9-10 Vμm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.

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文章編號133112
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號13
DOIs
出版狀態已出版 - 28 3月 2005

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