摘要
TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.
原文 | ???core.languages.en_GB??? |
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文章編號 | 223113 |
頁(從 - 到) | 1-3 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 87 |
發行號 | 22 |
DOIs | |
出版狀態 | 已出版 - 2005 |