Synthesis and characterization of metallic TaSi2 nanowires

Y. L. Chueh, L. J. Chou, S. L. Cheng, L. J. Chen, C. J. Tsai, C. M. Hsu, S. C. Kung

研究成果: 雜誌貢獻期刊論文同行評審

43 引文 斯高帕斯(Scopus)

摘要

TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.

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文章編號223113
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號22
DOIs
出版狀態已出版 - 2005

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