Switching mode and mechanism in binary oxide resistive random access memory using Ni electrode

Kuan Liang Lin, Tuo Hung Hou, Yao Jen Lee, Jhe Wei Chang, Jun Hung Lin, Jiann Shieh, Cheng Tung Chou, Tan Fu Lei, Wen Hsiung Chang, Wen Yueh Jang, Chen Hsi Lin

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

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Physics & Astronomy

Engineering & Materials Science