Switching mode and mechanism in binary oxide resistive random access memory using Ni electrode

Kuan Liang Lin, Tuo Hung Hou, Yao Jen Lee, Jhe Wei Chang, Jun Hung Lin, Jiann Shieh, Cheng Tung Chou, Tan Fu Lei, Wen Hsiung Chang, Wen Yueh Jang, Chen Hsi Lin

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

摘要

Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO2 and ZrO2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al2O3 and SiO2. Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO2, in contrast to the formation of oxygen-vacancy filaments in Al2O3. The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes.

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文章編號031801
期刊Japanese Journal of Applied Physics
52
發行號3 PART 1
DOIs
出版狀態已出版 - 3月 2013

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