Surface orientation effects on SiGe quantum dots and nanorings formation

C. H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, C. W. Liu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Surface orientation effects on SiGe quantum dots and nanorings have been investigated in this work. The base shapes of SiGe QDs and nanorings can be controlled by different surface orientation. Moreover, the hydrogen desorption rate is different in three kinds of surface orientation. The surface diffusion, which plays an important role in Ge out-diffusion mechanism, is dominated by the hydrogen desorption rate, and thus the formation rate of SiGe nanorings becomes different.

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主出版物標題SiGe, Ge, and Related Compounds 4
主出版物子標題Materials, Processing, and Devices
發行者Electrochemical Society Inc.
頁面649-659
頁數11
版本6
ISBN(電子)9781607681755
ISBN(列印)9781566778251
DOIs
出版狀態已出版 - 2010

出版系列

名字ECS Transactions
號碼6
33
ISSN(列印)1938-5862
ISSN(電子)1938-6737

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