Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Kuan Kan Hu, Ruey Dar Chang, Wei Yen Woon

研究成果: 雜誌貢獻期刊論文同行評審

摘要

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

原文???core.languages.en_GB???
文章編號107128
期刊AIP Advances
5
發行號10
DOIs
出版狀態已出版 - 1 10月 2015

指紋

深入研究「Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation」主題。共同形成了獨特的指紋。

引用此