Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

Jen Wei Pan, Ken Gi Chau, Jen Inn Chyi, Yuan Kuang Tu, Jy Wang Liaw

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

The slope efficiency and threshold current density of 1.3 μm AlGaInAs/InP lasers with AlInAs-AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents.

原文???core.languages.en_GB???
頁(從 - 到)2090-2092
頁數3
期刊Applied Physics Letters
72
發行號17
DOIs
出版狀態已出版 - 1998

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