Making progress in recent years, with the technology of the grating, the grating period can be reduced to shrink the size of the light coupler on a waveguide. The working wavelength of the light coupler can be in the range from the near-infrared to visible. In this study, we used E-gun evaporation system with ion-beam-assisted deposition system to fabricate bottom cladding (SiO2), guiding layer (Ta2O5) and Distributed Bragg Reflector(DBR) of the waveguide on the silicon substrate. Electron-beam lithography is used to make sub-wavelength gratings and reflector grating on the planar waveguide which is a coupling device on the guiding layer. The best fabrication parameters were analyzed to deposit the film. The exposure and development times also influenced to fabricate the grating quality. The purpose is to reduce the device size and enhance coupling efficiency which maintain normal incidence of the light. We designed and developed the device using the Finite-Difference Time-Domain (FDTD) method. The grating period, depth, fill factor, film thickness, Distributed Bragg Reflector(DBR) numbers and reflector grating period have been discussed to enhance coupling efficiency and maintained normal incidence of the light. According to the simulation results, when the wavelength is 1300 nm, the coupling grating period is 720 nm and the Ta2O5 film is 460 nm with 360 nm of reflector grating period and 2 layers of Distributed Bragg Reflector, which had the optimum coupling efficiency and normal incidence angle. In the measurement, We successfully measured the TE wave coupling efficiency of the photoresist grating coupling device.