Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

Y. T. Li; J. W. Shi; C. L. Pan; C. H. Chiu; W. S. Liu; N. W. Chen; C. K. Sun; J. I. Chyi

doi:10.1109/LPT.2007.897439

Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

Y. T. Li, J. W. Shi, C. L. Pan, C. H. Chiu, W. S. Liu, N. W. Chen, C. K. Sun, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

原文	???core.languages.en_GB???
頁（從 - 到）	840-842
頁數	3
期刊	IEEE Photonics Technology Letters
卷	19
發行號	11
DOIs	https://doi.org/10.1109/LPT.2007.897439
出版狀態	已出版 - 1 6月 2007

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10.1109/LPT.2007.897439

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title = "Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna",

abstract = "We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.",

keywords = "Low-temperature-grown GaAs (LTG-GaAs), Photonic transmitter, Terahertz (THz)",

author = "Li, {Y. T.} and Shi, {J. W.} and Pan, {C. L.} and Chiu, {C. H.} and Liu, {W. S.} and Chen, {N. W.} and Sun, {C. K.} and Chyi, {J. I.}",

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T1 - Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

AU - Li, Y. T.

AU - Shi, J. W.

AU - Pan, C. L.

AU - Chiu, C. H.

AU - Liu, W. S.

AU - Chen, N. W.

AU - Sun, C. K.

AU - Chyi, J. I.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

AB - We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs)-based separated-transport-recombination photodiode and a micromachined slot antenna. Under femtosecond optical pulse illumination, this device radiates strong electrical pulses (4.5-mW peak power) without the use of a Si-lens. It can be observed in the Fourier transform infrared spectrometer spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300 μW, occurs at 500 GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output terahertz power that occurs with the traditional LTG-GaAs-based photonic-transmitters when operated under high external applied electrical fields (>50 kV/cm) has been eliminated by the use of our device.

KW - Low-temperature-grown GaAs (LTG-GaAs)

KW - Photonic transmitter

KW - Terahertz (THz)

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SN - 1041-1135

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EP - 842

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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Sub-THz photonic-transmitters based on separated-transport-recombination photodiodes and a micromachined slot antenna

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