Study on correlation between structural and electronic properties of fluorinated oligothiophenes transistors by controlling film thickness

Keyphrases

• Transistor 100%
• Structural Properties 100%
• Film Thickness 100%
• Electronic Properties 100%
• Fluorinated 100%
• Oligothiophene 100%
• Terraces 66%
• High Mobility 66%
• Threshold Voltage 66%
• Top Contact 66%
• Charge Injection 66%
• Room Temperature 33%
• Near-edge X-ray Absorption Fine Structure (NEXAFS) 33%
• Further Analysis 33%
• Atomic Force Microscopy 33%
• X Ray Diffraction 33%
• Structure-property Relationships 33%
• Organic Field-effect Transistors 33%
• Temperature Field 33%
• Charge Transport 33%
• Structural Effect 33%
• Capacitance-voltage Measurements 33%
• Transistor Performance 33%
• Thin Film Morphology 33%
• Film Structure 33%
• Electronic States 33%
• Film Crystallinity 33%
• Rod-like 33%
• Microstructural 33%
• Edge Model 33%
• Performance Structure 33%
• Field-effect Mobility 33%
• Film Continuity 33%
• Metal-insulator-semiconductor Diode 33%
• Low-temperature Transport 33%
• Molecular Growth 33%
• Transport Measurements 33%
• Mobility Edge 33%
• Crystallite Structure 33%

Material Science

• Transistor 100%
• Electronic Property 100%
• Film Thickness 100%
• Film 75%
• Capacitance 25%
• Thin Films 25%
• Morphology 25%
• X-Ray Diffraction 25%
• Organic Field Effect Transistors 25%
• Materials Class 25%
• Crystallite 25%
• Atomic Force Microscopy 25%