Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

P. W. Li, David M.T. Kuo, W. M. Liao, W. T. Lai

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

The transport properties of Ge quantum-dot (QD) single-hole and -electron transistors (SHTs/SETs) are experimentally investigated. The tunneling currents of Ge-SETs and -SHTs could be modulated by adjusting top Si layer thickness on silicon-on-insulator substrates or applying back-gate biases due to parasitic transistors effect. The Coulomb oscillation of tunneling current is stable with respect to temperature, indicating the observed current should go through the energy levels of a Ge QD but not through trap states. The kp method has been employed to calculate the hole energy levels of a spherical Ge QD to clarify the homogeneous oscillation current characteristic of SHTs.

原文???core.languages.en_GB???
文章編號213117
期刊Applied Physics Letters
88
發行號21
DOIs
出版狀態已出版 - 21 5月 2006

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