Study of Diffusion Barrier for Solder/n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

Wen Chih Lin, Ying Sih Li, Albert T. Wu

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

摘要

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

原文???core.languages.en_GB???
頁(從 - 到)148-154
頁數7
期刊Journal of Electronic Materials
47
發行號1
DOIs
出版狀態已出版 - 1 1月 2018

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