摘要
The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 325-328 |
頁數 | 4 |
期刊 | Applied Surface Science |
卷 | 212-213 |
發行號 | SPEC. |
DOIs | |
出版狀態 | 已出版 - 15 5月 2003 |