Structural evolution in Ge + implantation amorphous Si

J. H. He, W. W. Wu, H. H. Lin, S. L. Cheng, Y. L. Chueh, L. J. Chou, L. J. Chen

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

The structural evolution in Ge + implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge + to a dose of 5 × 10 15 ions/cm 2 . A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.

原文???core.languages.en_GB???
頁(從 - 到)325-328
頁數4
期刊Applied Surface Science
212-213
發行號SPEC.
DOIs
出版狀態已出版 - 15 5月 2003

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