Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi; Xin Nan Chenl; Jye Hong Chen; J. E. Bowers; Ying Jay Yang; Jin Wei Shi

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi, Xin Nan Chenl, Jye Hong Chen, J. E. Bowers, Ying Jay Yang, Jin Wei Shi

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

原文	???core.languages.en_GB???
主出版物標題	2016 International Semiconductor Laser Conference, ISLC 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784885523069
出版狀態	已出版 - 2 12月 2016
事件	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan 持續時間: 12 9月 2016 → 15 9月 2016

出版系列

名字	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN（列印）	0899-9406

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???event.eventtypes.event.conference???	2016 International Semiconductor Laser Conference, ISLC 2016
國家/地區	Japan
城市	Kobe
期間	12/09/16 → 15/09/16

引用此

Chi, K. L., Chenl, X. N., Chen, J. H., Bowers, J. E., Yang, Y. J., & Shi, J. W. (2016). Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. 於 2016 International Semiconductor Laser Conference, ISLC 2016 文章 7765750 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

Chi, Kai Lun ; Chenl, Xin Nan ; Chen, Jye Hong 等. / Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Conference Digest - IEEE International Semiconductor Laser Conference).

@inproceedings{bc5fd11799644b618aac262a4571359f,

title = "Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs",

abstract = "By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.",

author = "Chi, {Kai Lun} and Chenl, {Xin Nan} and Chen, {Jye Hong} and Bowers, {J. E.} and Yang, {Ying Jay} and Shi, {Jin Wei}",

note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

month = dec,

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series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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Chi, KL, Chenl, XN, Chen, JH, Bowers, JE, Yang, YJ & Shi, JW 2016, Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. 於 2016 International Semiconductor Laser Conference, ISLC 2016., 7765750, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 12/09/16.

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. / Chi, Kai Lun; Chenl, Xin Nan; Chen, Jye Hong 等.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765750 (Conference Digest - IEEE International Semiconductor Laser Conference).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

AU - Chi, Kai Lun

AU - Chenl, Xin Nan

AU - Chen, Jye Hong

AU - Bowers, J. E.

AU - Yang, Ying Jay

AU - Shi, Jin Wei

PY - 2016/12/2

Y1 - 2016/12/2

N2 - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

AB - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

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M3 - 會議論文篇章

AN - SCOPUS:85014166890

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Chi KL, Chenl XN, Chen JH, Bowers JE, Yang YJ, Shi JW. Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs. 於 2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7765750. (Conference Digest - IEEE International Semiconductor Laser Conference).

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

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出版系列

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