Stress relaxation in GaN by transfer bonding on Si substrates

S. C. Hsu, B. J. Pong, W. H. Li, Thomas E. Beechem, Samuel Graham, C. Y. Liu

研究成果: 雜誌貢獻期刊論文同行評審

35 引文 斯高帕斯(Scopus)

摘要

The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ∼85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.

原文???core.languages.en_GB???
文章編號251114
期刊Applied Physics Letters
91
發行號25
DOIs
出版狀態已出版 - 2007

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