Stress analysis of spontaneous Sn whisker growth

K. N. Tu, Chih Chen, Albert T. Wu

研究成果: 書貢獻/報告類型篇章同行評審

16 引文 斯高帕斯(Scopus)

摘要

Spontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between Sn and Cu to form the intermetallic compound Cu6Sn5 at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required because the free surface of the break is stressfree. Thus, spontaneous Sn whisker growth is unique that stress relaxation accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth by blocking both stress generation and stress relaxation is given.

原文???core.languages.en_GB???
主出版物標題Lead-Free Electronic Solders
主出版物子標題A Special Issue of the Journal of Materials Science: Materials in Electronics
發行者Springer US
頁面269-281
頁數13
ISBN(列印)0387484310, 9780387484310
DOIs
出版狀態已出版 - 2007

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