Stress analysis for a substrate holder module and thin films grown in an MOCVD reactor

Shu Wei Guo, Chih Kuang Lin

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

The aim of this work is, using finite element analysis, to study the effects of thermal load and rotation speed on the structural integrity of a substrate holder module in an MOCVD reactor. Several loading conditions are considered, including thermal load and rotational speeds of 0-1500 rpm. In addition, the wafer bow and residual stress of GaN film grown on silicon or sapphire wafer are systematically studied. Simulation results indicate the variation of critical stress with rotation speed in all of the components is small. Given a similar heat source in the MOCVD reactor, temperature of the upper components such as susceptor, substrate holders, and wafers is higher in the case of sapphire wafer than that in the case of silicon wafer. The temperature gradient of upper components is greater for the silicon wafer case. A greater temperature gradient in the film-substrate system generates a greater wafer bow and residual stress in the grown thin film. Therefore, temperature uniformity is an important parameter for the epitaxial process. The sign of residual stress is different between a GaN film grown on a sapphire wafer and a silicon wafer (compressive for sapphire wafer and tensile for silicon wafer). For growing a GaN thin film, sapphire wafer is better than silicon wafer in terms of lessening cracking in film.

原文???core.languages.en_GB???
主出版物標題Recent Development in Machining, Materials and Mechanical Technologies II - IC3MT 2016
編輯Yiin Kuen Fuh, Keiji Yamada
發行者Trans Tech Publications Ltd
頁面257-262
頁數6
ISBN(列印)9783035711011
DOIs
出版狀態已出版 - 2017
事件2nd International Conference on Machining, Materials and Mechanical Technologies, IC3MT 2016 - Matsue, Japan
持續時間: 7 10月 201611 10月 2016

出版系列

名字Key Engineering Materials
749 KEM
ISSN(列印)1013-9826
ISSN(電子)1662-9795

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???event.eventtypes.event.conference???2nd International Conference on Machining, Materials and Mechanical Technologies, IC3MT 2016
國家/地區Japan
城市Matsue
期間7/10/1611/10/16

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